LEC method for growing a single crystal of compound semiconducto

Details LEC method for growing a single crystal of compound semiconducto LEC method for growing a single crystal of compound semiconducto

1984-12-21

1990-03-27

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 1566202, 156DIG70, 422245, 422249, C30B 1504, C30B 2940, C30B 2948, C30B 3500

Patent

active

049117807

ABSTRACT:
If the distribution coefficient of an impurity in a compound melt is less than 1, the impurity concentration in the compound melt doped with the impurity increased during a crystal growth in an LEC method. A supplying device replenishes an undoped crystal into the melt in order to keep the impurity concentration constant. The undoped crystal is covered with a liquid encapsulant which is contained in an encapsulant-supporting-cylinder or double-cylinder. Replenishing rate (dQ/dt) of the undoped crystal and the growing rate (dS/dt) should satisfy the equation

REFERENCES:
patent: 3759671 (1973-09-01), Bleil
patent: 4246064 (1981-01-01), Dewees et al.
patent: 4303464 (1981-01-01), Suzuki et al.
patent: 4329195 (1982-05-01), Kudo

Affiliated with

Also associated with

Rating

LEC method for growing a single crystal of compound semiconducto does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with LEC method for growing a single crystal of compound semiconducto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LEC method for growing a single crystal of compound semiconducto will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1648450