Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-08-02
2011-08-02
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185090, C365S185120
Reexamination Certificate
active
07990765
ABSTRACT:
A Least Significant Bit (LSB) page recovery method used in a multi-level cell (MLC) flash memory device includes setting first through nthLSB page groups (n being a natural number that is larger than 2) comprising at least two LSB pages from among the LSB pages included in the MLC flash memory, programming the first through xthLSB pages (x is a natural number that is larger than 2) included in an ithLSB page group (i is a natural number that is smaller than n), generating and storing an ithLSB parity page for the first through xthLSB pages, programming first through xthMSB pages which correspond to one LSB page from among the first through xthLSB pages, and recovering a jthLSB page, which are paired with a jthMSB page, using the ithLSB parity page corresponding to the ithLSB page group, when a power supply to the MLC flash memory is stopped during the programming of the jthMSB page (j is a natural number that is smaller than x).
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Ahn Seong-jun
Park Kyung-Min
Nguyen Hien N
Nguyen Vanthu
Samsung Electronics Co,. Ltd.
Staas & Halsey , LLP
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