Industrial electric heating furnaces – Resistance furnace device – With internal atmosphere control
Patent
1997-06-03
1998-11-17
Hoang, Tu Ba
Industrial electric heating furnaces
Resistance furnace device
With internal atmosphere control
373110, 219390, F27D 706, F27B 514
Patent
active
058387161
ABSTRACT:
A method of testing a dry oxidation furnace for leaks which permit the entry of moisture into the oxidizing ambient is described. Such moisture, when present in sufficient concentration, can cause a high degree of boron depletion in silicon at p-type contact interfaces in the manufacture of p-channel MOSFETs. The depleted silicon presents a high resistance component to the contact thereby compromising its performance. A test wafer is subjected to a non-oxidizing ambient in the furnace according to a prescribed procedure. Measurements of the thickness of an oxide layer on the test wafer before and after the procedure indicate the presence of a leak of sufficient proportions to cause a deterioation of contact performance if the oxide grown during the test procedure exceeds between about 25 to 35 Angstroms. The procedure is also useful as a simple means of monitoring an oxidation furnace to provide a record of performance and signal the development of trends which suggest appropriate remedial maintenance.
REFERENCES:
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patent: 5637153 (1997-06-01), Nino et al.
S.Wolf et al. "Silicon Processing For The VLSI Era--vol. 1" Lattice Press, Sunset Beach, CA. 1986, p. 207.
Chang Hui-Hua
Ni Chi-Fu
Yu Yu-Jen
Ackerman Stephen B.
Hoang Tu Ba
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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