Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-09
2011-08-09
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000
Reexamination Certificate
active
07994043
ABSTRACT:
A method includes forming a patterned resist layer comprising a resist layer opening overlying a bond pad of a substrate. The resist layer opening is at least partially filled with a first solder component layer. A second solder component layer is formed on the first solder component layer. The patterned resist layer is removed. The first solder component layer and the second solder component layer are reflowed to form a lead free binary metal alloy solder bump electrically connected to the bond pad.
REFERENCES:
patent: 3392442 (1968-07-01), Napier et al.
patent: 4035526 (1977-07-01), Konantz et al.
patent: 4756467 (1988-07-01), Schatzberg
patent: 4950623 (1990-08-01), Dishon
patent: 5268072 (1993-12-01), Agarwala et al.
patent: 5461261 (1995-10-01), Nishiguchi
patent: 5872404 (1999-02-01), Lynch et al.
patent: 6013572 (2000-01-01), Hur et al.
patent: 6027957 (2000-02-01), Merritt et al.
patent: 6144103 (2000-11-01), Miller et al.
patent: 6162660 (2000-12-01), LaFontaine, Jr. et al.
patent: 6162718 (2000-12-01), Boettcher
patent: 6251501 (2001-06-01), Higdon et al.
patent: 6281106 (2001-08-01), Higdon et al.
patent: 6300234 (2001-10-01), Flynn et al.
patent: 6468893 (2002-10-01), Ueoka
patent: 6489229 (2002-12-01), Sheridan et al.
patent: 6492197 (2002-12-01), Rinne
patent: 6555296 (2003-04-01), Jao et al.
patent: 6596621 (2003-07-01), Copeland et al.
patent: 6617237 (2003-09-01), Lee et al.
patent: 6642079 (2003-11-01), Liu et al.
patent: 6673711 (2004-01-01), Tong et al.
patent: 6784086 (2004-08-01), Ray et al.
patent: 6969915 (2005-11-01), Tago et al.
patent: 6977213 (2005-12-01), Tsai et al.
patent: 7119000 (2006-10-01), Shimizu et al.
patent: 7205221 (2007-04-01), Akram et al.
patent: 2004/0121267 (2004-06-01), Jang
patent: 2007/0102815 (2007-05-01), Kaufmann et al.
patent: 2003-342784 (2003-12-01), None
Mis J. Daniel
Rinne Glenn A.
Amkor Technology Inc.
Gunnison McKay & Hodgson, L.L.P.
Henry Caleb
Hodgson Serge J.
Pham Thanh V
LandOfFree
Lead free alloy bump structure and fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lead free alloy bump structure and fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lead free alloy bump structure and fabrication method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2737999