Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2006-10-24
2006-10-24
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S686000, C257S676000, C257S778000, C257S738000, C257S777000, C257S784000
Reexamination Certificate
active
07126209
ABSTRACT:
A resin-encapsulated semiconductor device includes: a semiconductor chip on a surface of which a group of electrodes is disposed; a plurality of inner leads arranged along a periphery of the semiconductor chip; connecting members for connecting the electrodes of the semiconductor chip with the respective inner leads, an encapsulating resin for encapsulating surfaces of the semiconductor chip and the connecting members; and external electrodes exposed from the encapsulating resin. Each of the inner leads extends across the periphery of the semiconductor chip from an internal side to an external side of the periphery, and includes a protruded portion provided on a surface of the inner lead on an external side relative to the periphery of the semiconductor chip, the protruded portion being protruded in a thickness direction. Conductive bumps as the connecting members on the electrodes of the semiconductor chip are connected with internal portions of the respective inner leads, the internal portions being positioned inward relative to the protruded portions. The external electrodes are formed on surfaces of the protruded portions, and tip ends of the external electrodes are protruded relative to a back face of the semiconductor chip.
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Minamio Masanori
Nagata Haruto
Nishio Tetsushi
Hamre Schumann Mueller & Larson P.C.
Huynh Andy
Nguyen Tram H.
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