Lead frame for use in a semiconductor device and a semiconductor

Details Lead frame for use in a semiconductor device and a semiconductor Lead frame for use in a semiconductor device and a semiconductor

1994-01-12

1995-06-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

Of specified material other than copper

257666, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

054245788

ABSTRACT:
A lead frame for use in a resin-sealed semiconductor device includes: a lead frame with inner lead portion or inner lead portion and die pad portion being silver-plated and outer lead portion being solder-plated; and a semiconductor chip being die-bonded on said die pad portion and wire-bonded to said inner lead portion. The lead frame is constructed such that a solder plating layer is provided on the top surface of the lead frame while a tin plating layer is provided under the solder plating layer. Alternatively, a copper or nickel layer or layers are provided under the solder layer or between the solder layers.

REFERENCES:
patent: 4707724 (1987-11-01), Suzuki et al.
patent: 5138431 (1992-08-01), Huang et al.
Japanese Patent Application Laid-Open Sho 51 No. 115775 with published English abstract.
Japanese Patent Application Laid-Open Sho 60 No. 79760 with published English abstract.
Japanese Patent Application Laid-Open Hei 3 No. 191557 with published English abstract.

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