Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – Of specified material other than copper
Patent
1999-03-02
2000-11-21
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
Of specified material other than copper
257769, 257762, H01L 23495
Patent
active
06150713&
ABSTRACT:
A lead frame plating method including the steps of (a) forming an intermediate layer on the upper surface of a metal substrate, (b) submerging the metal substrate into a plating solution, and (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.
REFERENCES:
patent: 5510197 (1996-04-01), Takahashi et al.
patent: 5650661 (1997-07-01), Mathew
patent: 5760468 (1998-06-01), King et al.
patent: 5767574 (1998-06-01), Kim et al.
patent: 5801436 (1998-09-01), Serizawa
patent: 5914532 (1999-06-01), Akagi et al.
patent: 5977620 (1999-11-01), Kim et al.
patent: 5994767 (1999-11-01), Huang et al.
patent: 6034422 (2000-03-01), Horita et al.
patent: 6037653 (2000-03-01), Kinm et al.
Jang Bae-soon
Kang Sung-il
Kim Ju-bong
Lee Kyu-han
Park Se-chul
Clark Sheila V.
Samsung Aerospace Industries Ltd.
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