Lead frame for face-down bonding

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – On insulating carrier other than a printed circuit board

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Details

257670, 257675, 257666, 257676, H01L 23495

Patent

active

060181893

ABSTRACT:
In a lead frame for face-down bonding, plural leads (3) are bonded to bumps (2) formed on electrodes of a semiconductor chip (1) by face-down bonding based on ultrasonic wave, and grooves (4) having V-shaped cross section are formed on the leads (3) at tip positions at which the leads (3) are bonded to the bumps (2). The leads comprise a first lead extending in a first direction and a second lead extending in a second direction which is different from the first direction, and all the grooves (4) extend in the same direction irrespective of the direction of the lead (3). Ultrasonic wave bonding is performed in the direction of the V-shaped groove (4) to move the bump (2) in the direction of the V-shaped groove (4) and weld the bump (2) and the lead (3) at the contact surface with the V-shaped groove (4), so that the bonding strength of the bump (2) and the lead (3) can be made uniform.

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