Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – Of specified material other than copper
Patent
1995-08-23
1996-06-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
Of specified material other than copper
257666, H01L 23495
Patent
active
055302831
ABSTRACT:
An object of the present invention is to provide a lead frame and a material for lead frame which insure excellent bonding and enables substantial reduction of time for production because such processes as plating are not required and furthermore are excellent in abration resistance.
The present invention is characterized in that a silver layer having a construction where amplitude of a refracted ray refracted on the (200) surface is 1/3 or more of the amplitude of refracted X ray refracted on the (111) surface comprises an outer lead section of the base material for the lead frame. The base material is preferably copper, copper-alloy, iron, or iron alloy. The silver layer is formed, for instance, by means of silver plating, and the thickness is preferably in a range from 8 m to 30 m. An intermediate layer may be provided between a surface of the base material and the silver layer.
REFERENCES:
patent: 4883774 (1989-11-01), Djennas et al.
patent: 4903401 (1990-02-01), Webb
Ikeda Nobukazu
Morimoto Akihiro
Ohmi Tadahiro
Shinohara Tsutomu
Shirai Yasuyuki
Clark S. V.
Crane Sara W.
Fujikin Inc.
Tadahiro OHMI
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