Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-23
2005-08-23
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S336000, C257S344000, C257S408000
Reexamination Certificate
active
06933559
ABSTRACT:
In high-voltage devices comprising a lightly doped region (3) provided with a heavily doped contact zone4, damage caused by local breakdown at the corner of the contact zone may occur as a result of the Kirk effect at a high current density. To improve the robustness of the device, an annular protection zone (14) of the same conductivity type is provided so as to surround the contact zone at a small distance. As a result, breakdown will occur initially at the corner of the protection zone. However, due to the resistance between the protection zone and the contact zone, a more uniform current distribution is obtained, which prevents damage caused by local current concentration.
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Egbers Johannes Hendrik Hermanus Alexius
Heringa Anco
Ludikhuize Adrianus Willem
Van Roijen Raymond
Dickey Thomas L
Koninklijke Philips Electronics , N.V.
Tran Minhloan
Zawilski Peter
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