LDMOS transistor with reduced projective area of source region

Details LDMOS transistor with reduced projective area of source region LDMOS transistor with reduced projective area of source region

1994-10-18

1996-04-16

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257341, 257342, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055085474

ABSTRACT:
Reduced-size LDMOS transistor having reduced leakage and a reduced propensity to latch-up. The LDMOS transistor has a trench with vertical sidewalls adjacent to a source region to help reduce a vertical projective area of the source region.

REFERENCES:
patent: 4561168 (1985-12-01), Pitzer et al.
patent: 4682405 (1987-07-01), Blanchard et al.

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