LDMOS transistor with improved gate shield

Details LDMOS transistor with improved gate shield LDMOS transistor with improved gate shield

2007-12-11

2007-12-11

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S340000, C257S409000, C257S630000, C257SE21427, C257SE29040, C257SE29268, C257SE21452, C257SE29116, C257SE29317

Reexamination Certificate

active

10870753

ABSTRACT:
A LDMOS transistor having a gate shield provides reduced drain coupling to the gate shield and source by restricting the thickness of the gate shield and by confining a source contact to the source region without overlap of the gate.

REFERENCES:
patent: 5252848 (1993-10-01), Adler et al.
patent: 5665639 (1997-09-01), Seppala et al.
patent: 5869875 (1999-02-01), Hebert
patent: 6211568 (2001-04-01), Hong
patent: 6215152 (2001-04-01), Hebert
patent: 6506648 (2003-01-01), Hebert et al.
patent: 6744117 (2004-06-01), Dragon et al.
patent: 7119399 (2006-10-01), Ma et al.
patent: 2002/0033508 (2002-03-01), Morikawa et al.
patent: 2002/0102800 (2002-08-01), Van Den Heuvel
patent: 2002/0163016 (2002-11-01), Shibata
patent: 2005/0087845 (2005-04-01), Norstrom et al.
patent: 2006/0040441 (2006-02-01), Lotfi et al.

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