Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-20
2005-09-20
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S342000
Reexamination Certificate
active
06946706
ABSTRACT:
An LDMOS structure which provides for reduced hot carrier effects. The reduction in hot carrier effects is achieved by increasing the size of the drain region of the LDMOS relative to the size of the source region. The larger size of the drain region reduces the concentration of electrons entering the drain region. This reduction in the concentration of electrons reduces the number of impact ionizations, which in turn reduces the hot carrier effects. The overall performance of the LDMOS is improved by reducing the hot carrier effects.
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U.S. Appl. No. 10/266,543, filed Oct. 8, 2002, entitled: “Method and device for improving hot carrier reliability of an LDMOS transistor using drain ring over-drive bias,” by Douglas Brisbin et al., 16 pages in length.
Brisbin Douglas
Owens Alexander H.
Strachan Andy
Tsuei David
Landau Matthew C
National Semiconductor Corporation
Stallman & Pollock LLP
Thomas Tom
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