LDMOS transistor

Details LDMOS transistor LDMOS transistor

2006-09-14

2008-11-25

Toledo, Fernando L (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C257S304000, C257S308000, C365S171000

Reexamination Certificate

active

07456094

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an insulating layer on top of the substrate, a lateral field effect transistor comprising a drain region and a source region arranged in the substrate and a gate arranged above the substrate within the insulating layer, a drain runner arranged on top of the insulator layer above the drain region, a source runner arranged on top of the insulator layer above the source region, a gate runner arranged on top of the insulator layer outside an area defined by the drain runner and the source runner, a first coupling structure comprising a via for coupling the drain runner with the drain region, and a second coupling structure comprising a via for coupling the source runner with the source region.

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