LDMOS transistor

Details LDMOS transistor LDMOS transistor

2006-01-24

2006-01-24

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S337000, C257S339000, C257S340000, C257S344000, C257S408000, C257S548000, C257S611000

Reexamination Certificate

active

06989567

ABSTRACT:
A semiconductor transistor structure includes a substrate having an epitaxial layer, a source region extending from the surface of the epitaxial layer, a drain region within the epitaxial layer, a channel located between the drain and source regions, and a gate arranged above the channel. The drain region includes a first region for establishing a contact with an electrode, a second region being less doped than the first region being buried within the epitaxial layer and extending from the first region horizontally in direction towards the gate, a third region less doped than the second region and extending vertically from the surface of the epitaxial layer and horizontally from the second region until under the gate, a top layer extending from the surface of the epitaxial layer to the second region, and a bottom layer extending from the second region into the epitaxial layer.

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