LDMOS transistor

Details LDMOS transistor LDMOS transistor

2005-06-28

2005-06-28

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S337000, C257S339000, C257S341000, C257S342000, C257S492000, C257S493000

Reexamination Certificate

active

06911696

ABSTRACT:
A lateral double-diffused MOS transistor (LDMOS) has a body zone and additional body regions assigned to the body zone, thereby producing a “deep body.” The deep body results in a quasi one-dimensional course of the potential lines, with the result that the dielectric strength is increased. The self-alignment between gate and channel is preserved, and parameter fluctuations are reduced.

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B. Jayant Baliga: “Modern Power Devices”,Krieger Publishing Company, Malabar, Florida, 1987, pp. 81, 83 and 88.
Taylor Efland: “Lateral DMOS Structure Development for Advanced Power Technologies”,TI Technical Journal, Mar./Apr. 1994, pp. 10-24.
S. Merchant et al.: “High-Performance 13-65 V Rated LDMOS Transistors in an Advanced Smart Power Technology”,IEEE, 1999, pp. 225-227.

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