LDMOS transistor

Details LDMOS transistor LDMOS transistor

2008-04-29

2008-04-29

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S344000, C257S492000, C257S493000, C257SE29027, C257SE29066, C257SE29256, C257SE29266, C257SE29278

Reexamination Certificate

active

07365402

ABSTRACT:
An LDMOS semiconductor transistor structure comprises a substrate having an epitaxial layer of a first conductivity type, a source region extending from a surface of the epitaxial layer of a second conductivity type, a lightly doped drain region within the epitaxial layer of a second conductivity type, a channel located between the drain and source regions, and a gate arranged above the channel within an insulating layer, wherein the lightly doped drain region comprises an implant region of the first conductivity type extending from the surface of the epitaxial layer into the epitaxial layer covering an end portion of the lightly doped drain region next to the gate.

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