Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-08-03
2000-11-07
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, H01L 2978, H01L 2910
Patent
active
061440698
ABSTRACT:
A single side high voltage lateral diffused metal-oxide-semiconductor (LDMOS) transistor is disclosed. The drain side is low-voltage N-well with lower concentration to increase driving voltage while the source side is low-voltage P-well with higher concentration to increase the interior electric field such that the conductivity is improved and the threshold voltage is adjusted by high-voltage P-well with lower concentration.
REFERENCES:
patent: 5252848 (1993-10-01), Adler et al.
patent: 5406110 (1995-04-01), Kwon et al.
patent: 5825065 (1998-10-01), Corso et al.
patent: 5841166 (1998-11-01), D'Anna et al.
patent: 5849275 (1998-12-01), Kitamura et al.
patent: 5959335 (1999-09-01), Bryant et al.
Meier Stephen D.
United Microelectronics Corp.
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