LDMOS device with multiple gate insulating members

Details LDMOS device with multiple gate insulating members LDMOS device with multiple gate insulating members

2011-01-25

2011-01-25

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257SE29133, C257SE21625, C438S591000

Reexamination Certificate

active

07875938

ABSTRACT:
An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a portion of the substrate between the source and the drain region, such that a planar interface is provided between the insulating layer and a surface of the substrate. An insulating member is then formed on a portion of the insulating layer, and a gate layer is formed over part of the insulating member and the insulating layer. By employing such a structure, it has been found that a flat current path exists which enables the on-resistance to be decreased while maintaining a high breakdown voltage.

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