Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2002-10-08
2003-06-17
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06580131
ABSTRACT:
FIELD OF THE INVENTION
The invention relates to the general field of lateral diffused MOS (LDMOS) devices with particular reference to improving voltage breakdown without increasing on-resistance,
BACKGROUND OF THE INVENTION
An LDMOS device is basically a MOSFET fabricated using a double diffusion process with coplanar drain and source regions. A typical structure of the prior art is shown in FIG.
1
. N−body of silicon
12
(that typically has a resistivity between about 0.1 and 1 ohm-cm) is isolated from P−substrate
11
by P+boundaries
13
. P−well
18
extends downwards from the top surface and includes N+source
17
whose distance L from the junction between
12
and
18
defines the channel. With the application of positive voltage V
G
polysilicbon gate
16
(beneath which is a layer of gate oxide not explicitly shown), current can flow through the channel from source
17
into N−body
12
to be collected at N+drain
17
.
Metal contact
15
shorts source
17
to P+ohmic contact
19
and thence to substrate
12
. This allows source current to be applied through the substrate which can then be cooled through a heat sink. The role of field oxide regions
14
is to release electric field crowding at poly edge of drain side.
The on-resistance of devices of this type is roughly proportional to their breakdown voltage because the value of the latter is determined by the resistivity of N−region
12
. Thus, a compromise has to be made between minimum on-resistance and maximum breakdown voltage. Additionally, the higher the on-resistance the lower the high frequency cut-off of the device.
FIG. 2
is a plot of drain current vs. drain voltage in the off state for a device of the type illustrated in
FIG. 1
This device had an on-resistance of around 1.1 mohm. cm
2
and, as can be seen, breakdown has occurred at about 40 volts. The present invention discloses how the voltage breakdown of such a device may be raised by about 60% without having to increase the on-resistance.
A routine search of the prior art was performed with the following references of interest being found:
In U.S. Pat. No. 5,517,046, Hsing et al. disclose a DMOS device with a 2 step doping N−and N+in an epi layer. As will become apparent, this invention teaches directly away from the present invention. Gregory, in U.S. Pat. No. 6,069,034, shows a DMOS with a buried drain that is connected to the surface through a sinker. U.S. Pat. No. 5,869,371 (Blanchard) discloses a VDMOS device similar to that of Hsing et al. U.S. Pat. No. 5,852,314 (Depetro et eal.) and U.S. Pat. No. 5,48,147 (Mei) show related patents.
SUMMARY OF THE INVENTION
It has been an object of the present invention to provide an LDMOS device having significantly higher breakdown voltage, for the same on-resistance, than similar devices of the prior art.
This object has been achieved by having two epitaxial N−regions instead of the single epitaxial N−region that is used by devices of the prior art The fesistivities and thicknesses of these two N−regions are chosen so that their mean resistivity is similar to that of the aforementioned single N−layer. A key feature is that the lower N−layer (i.e. the one closest to the P−substrate) has a resistivity that is greater than that of the upper N−layer. If these constraints are met as described in greater detail in the specification, improvements in breakdown voltage of up to 60% can be achieved without having to increase the on-resistance.
REFERENCES:
patent: 4489341 (1984-12-01), Mayrand
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5548147 (1996-08-01), Mei
patent: 5557128 (1996-09-01), Yamazaki et al.
patent: 5852314 (1998-12-01), Depetro et al.
patent: 5869371 (1999-02-01), Blanchard
patent: 6069034 (2000-05-01), Gregory
patent: 2002/0025961 (2002-02-01), Scarborough et al.
patent: 2002/0045301 (2002-04-01), Sicard et al.
Huang Chih-Feng
Huang Kuo-Su
Ackerman Stephen B.
Foong Suk San
Fourson George
Saile George O.
Taiwan Semiconductor Manufacturing Company
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