LDMOS device for ESD protection circuit

Details LDMOS device for ESD protection circuit LDMOS device for ESD protection circuit

2011-03-15

2011-03-15

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S346000, C257S401000, C257S409000, C257SE21427, C257SE29062, C257SE29064, C257SE29256, C257SE29258, C257SE29268

Reexamination Certificate

active

07906810

ABSTRACT:
A LDMOS device for an ESD protection circuit is provided. The LDMOS device includes a substrate of a first conductivity type, a deep well region of a second conductivity type, a body region of the first conductivity type, first and second doped regions of the second conductivity type, and a gate electrode. The deep well region is disposed in the substrate. The body region and the first doped region are respectively disposed in the deep well region. The second doped region is disposed in the body region. The gate electrode is disposed on the deep well region between the first and second doped regions. It is noted that the body region does not include a doped region of the first conductivity type having a different doped concentration from the body region.

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