LDMOS device and method for manufacturing the same

Details LDMOS device and method for manufacturing the same LDMOS device and method for manufacturing the same

2009-07-21

2011-11-22

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S345000, C257S346000, C257S347000, C257S348000, C257S349000, C257SE29261

Reexamination Certificate

active

08063446

ABSTRACT:
Provided is a LDMOS device and method for manufacturing. The LDMOS device includes a second conductive type buried layer formed in a first conductive type substrate. A first conductive type first well is formed in the buried layer and a field insulator with a gate insulating layer at both sides are formed on the first well. On one side of the field insulator is formed a first conductive type second well and a source region formed therein. On the other side of the field insulator is formed an isolated drain region. A gate electrode is formed on the gate insulating layer on the source region and a first field plate is formed on a portion of the field insulator and connected with the gate electrode. A second field plate is formed on another portion of the field insulator and spaced apart from the first field plate.

REFERENCES:
patent: 6097063 (2000-08-01), Fujihira
patent: 6168983 (2001-01-01), Rumennik et al.
patent: 6933560 (2005-08-01), Lee et al.
patent: 2002/0079521 (2002-06-01), Lin
patent: 2004/0238913 (2004-12-01), Kwon et al.
patent: 2007/0069308 (2007-03-01), Ko

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