Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-23
2009-12-01
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S339000, C257SE29027, C438S197000
Reexamination Certificate
active
07626233
ABSTRACT:
An LDMOS transistor comprises source, channel and extended drain regions. The extended drain region comprises a plurality of islands that have a conductivity type that is opposite to the extended drain region. The islands have a depth less than a depth of the extended drain region.
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Ma Gordon
Tornblad Olof
Coats & Bennett P.L.L.C.
Infineon - Technologies AG
Purvis Sue
Stowe Scott
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