LDD semiconductor device with peak impurity concentrations

Details LDD semiconductor device with peak impurity concentrations LDD semiconductor device with peak impurity concentrations

1995-09-15

1997-01-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, 257371, 257408, H01L 27088

Patent

active

055942644

ABSTRACT:
A semiconductor device includes a p-type semiconductor layer, a punch-through stopper layer having a positive impurity concentration and formed on an upper side of the p-type semiconductor layer, a buried layer formed on an upper surface of the punch-through stopper layer in a channel region, N-type source and drain regions of an LDD construction sandwiching the buried layer therebetween, a gate oxide film formed on the buried layer, and a gate electrode opposed to the buried layer, with a gate oxide film therebetween, wherein the punch-through stopper layer is shallower than the drain region.

REFERENCES:
patent: 4242691 (1980-12-01), Kotani et al.
patent: 4819043 (1989-04-01), Yazawa et al.
patent: 5463237 (1995-10-01), Funaki
1992 ICSSDM, pp. 695-696, 1992, R. Nagai, et al., "Low Voltage, High Gain, 0.2 um NMOSFETs by Channel Counter Doping With AS".
1994 ICSSDM, pp. 509-511, 1994, E. P. Ver Ploeg, et al., "Mobility Improvement By Counter Doping and Its Reverse Short Channel Effect Associated Channel-Length-Dependent Degradation".
1985 Symp. VLSI Tech., Digest of Tech. Papers, vol. 3, pp. 310-311, 1985, S. Wolf, "Silicon Processing For the VLSI Era".

Affiliated with

Also associated with

Rating

LDD semiconductor device with peak impurity concentrations does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with LDD semiconductor device with peak impurity concentrations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LDD semiconductor device with peak impurity concentrations will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1390262