Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1989-10-23
1993-01-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257340, 257343, H01L 2910, H01L 2980, H01L 2978
Patent
active
051775719
ABSTRACT:
Disclosed is an LDDMOSFET, in which a gate electrode (2) having a cross-sectional shape having a lower side and an upper side longer than the upper side is formed of only conductive materials, and diffusion layers (5b, 6b) of low concentration and high concentration constituting a drain are both formed so as to be overlapped with portions below the gate electrode (2) utilizing the shape of this gate electrode (2). Since the gate electrode (2) is formed of only the conductive materials, it becomes easy to word the gate electrode (2) so as to be in a desired shape. Since the diffusion layers (5b, 6b) of low concentration and high concentration constituting the drain are both overlapped with the portions below the gate electrode (2), the performance as a transistor is not degraded even if the polarity of the surface of the diffusion layer (5b, 6b) of low concentration is inverted by the effect of hot electrons.
REFERENCES:
patent: 4656492 (1987-04-01), Sunami et al.
patent: 4755479 (1988-07-01), Miura
patent: 4818715 (1989-04-01), Chao
patent: 4837180 (1989-06-01), Chao
patent: 4894694 (1990-01-01), Cham et al.
patent: 4907048 (1990-03-01), Huang
"Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology", Tsang et al., IEEE Trans. on Elec. Dev., vol. Ed-29, #4, Apr. 1982, pp. 590-596.
"A novel submicron LDD Transistor with Inverse-T Gate Structure", Huang et al., IEDM Technical Digest, Dec. 1986, pp. 742-744.
Dennard et al., "Controllable process for Fabricating Short-Channel FET Device", IBM Technical Disclosure Bulletin, vol. 18, No. 8 (Jan., 1976), pp. 2743-2744.
Hori et al., "A New MOSFET with Large-Tilt-Angle Implanted Drain (LATID) Structure", IEEE Electron Device Letters, vol. 9, No. 6 (Jun., 1988), pp. 300-302.
Zeisler et al., "Degradationseffekte bei Kurzkanaltransistoren durch die Injektion Heisser Landungstrager in das Gateoxid und Drain Profile Engineering", ntzArchiv Bd. 8 (1986) H.8, pp. 191-197.
Eimori Takahisa
Ozaki Hiroji
Satoh Shin-ichi
Tanaka Yoshinori
Wakamiya Wataru
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid
LandOfFree
LDD MOSFET with particularly shaped gate electrode immune to hot does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with LDD MOSFET with particularly shaped gate electrode immune to hot, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LDD MOSFET with particularly shaped gate electrode immune to hot will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2394417