Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-08
1995-01-31
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257500, H01L 2978
Patent
active
053861337
ABSTRACT:
An object of the subject invention is to offer a MOS semiconductor device capable of suppressing hot carrier degradation, improving driving capabilities and also enabling miniaturization to the submicron region and smaller; and methods for its fabrication. By forming the gate electrode 5 through the medium of gate oxide film 4 on one main surface of the first conductivity type semiconductor substrate 1 between the second conductivity type low concentration diffusion layers 3, the effective channel length is made roughly equal to the gate length, and miniaturization to the submicron region and smaller is accomplished. Also, by forming the second conductivity type diffusion layer 7A on the sides of the gate electrode 5 through the medium of the thin insulating film 6 to be above the low concentration diffusion layer 3 and further contacting the low concentration diffusion layer 3, the high electrical field within the low concentration diffusion layer 3 is sufficiently ameliorated, generation of hot carriers is suppressed, and resistance to degradation is improved. Moreover, by controlling the high resistance second conductivity typetype diffusion layer 7 A at the sides of the gate electrode 5, the source resistance is decreased and driving capabilities are improved. At the same time the contact region of the source-drain electrode is miniaturized.
REFERENCES:
patent: 4951100 (1990-08-01), Parrillo
Simple Gate-to-Drain Overlapped Mosfet's C. K. Lau, 1987 IEEE, pp. 358-361.
A Super Self-Aligned Source--Drain Mosfet IH--Chin Chen, 1990 IEEE Electron Device Letters, pp. 78-81.
Hiroki Akira
Kurimoto Kazumi
Odanaka Shinji
Larkins William D.
Matsushita Electric - Industrial Co., Ltd.
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