Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-01-21
1999-07-20
Booth, Richard A
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438305, H01L 2144
Patent
active
059267038
ABSTRACT:
It is an object to obtain a semiconductor device with the LDD structure having both operational stability and high speed and a manufacturing method thereof. A high concentration region (11) with boron of about 1.times.10.sup.18 /cm.sup.3 introduced therein is formed extending from under a channel formation region (4) to under a drain region (6) and a source region (6') in a silicon substrate (1). The high concentration region (11) is formed in the surface of the silicon substrate (1) under the channel formation region (4), and is formed at a predetermined depth from the surface of the silicon substrate (1) under the drain region (6) and the source region (6'). A low concentration region (10) is formed in the surface of the silicon substrate (1) under the drain region (6) and the source region (6'). The formation of the high concentration region only in the surface of the semiconductor substrate under the channel formation region surely suppresses an increase in the leakage current and an increase in the drain capacitance.
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Inoue Yasuo
Joachim Hans-Oliver
Yamaguchi Yasuo
Booth Richard A
Mitsubishi Denki & Kabushiki Kaisha
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