Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-02-13
2007-02-13
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21135
Reexamination Certificate
active
10862636
ABSTRACT:
The present invention pertains to implementing a lightly doped channel (LDC) implant in fashioning a memory device to improve Vt roll-off, among other things. The lightly doped channel helps to preserve channel integrity such that a threshold voltage (Vt) can be maintained at a relatively stable level and thereby mitigate Vt roll-off. The LDC also facilitates a reduction in buried bitline width and thus allows the bitlines to be brought closer together. As a result more devices can be formed or “packed” within the same or a smaller area.
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Solid State Technology's WaferNEWS, The Semiconductor Equipment and Materials Weekly Briefing, Mar. 17, 2003, v10n11, 11 pgs.
Haddad Sameer
Kamal Tazrien
Qian Weidong
Ramsbey Mark
Randolph Mark
Eschweiler & Associates LLC
Geyer Scott B.
Spansion LLC
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