LD-MOS transistor

Details LD-MOS transistor LD-MOS transistor

1996-02-12

1997-05-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257337, 257338, 257493, H01L 2976, H01L 2358

Patent

active

056273940

ABSTRACT:
An object of the present invention is to provide an LD-MOS transistor with a reduced device real estate and high breakdown strength. An extended drain region doped with phosphorus is formed in contact with an underside of an insulation layer and a drain diffusion region, respectively. The insulation layer is deposited over a conductive gate layer and a drain diffusion region, respectively.

REFERENCES:
patent: 5306652 (1994-04-01), Kwon et al.
patent: 5406110 (1995-04-01), Kwon et al.
patent: 5429959 (1995-07-01), Smayling
patent: 5502323 (1996-03-01), Kitamura et al.

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