Layout structure for improving resistance uniformity of a polysi

Details Layout structure for improving resistance uniformity of a polysi Layout structure for improving resistance uniformity of a polysi

1996-07-23

1998-11-10

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257904, H01L 2711

Patent

active

058348158

ABSTRACT:
A layout structure for improving a polysilicon load resistor which has a uniform high resistance is disclosed. A polysilicon film is used as the high resistance load element so that the film has a relatively high resistance. However, the resistance of these resistors often varies. This variation can be up to two orders of magnitude. The non-uniform resistance is caused by hydrogen penetration into the polysilicon resistor. The solution of the present is to layout the SRAM cell so that the polysilicon resistor is completely covered by one of these subsequent layers. In the present invention, the polysilicon resistor is partially covered by different layers, such as a subsequent metal layer or polysilicon layer.

REFERENCES:
patent: 5610856 (1997-03-01), Yoshizumi et al.
patent: 5625215 (1997-04-01), Chen et al.

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