Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-09-22
1999-10-19
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257207, H01L 2362
Patent
active
059693908
ABSTRACT:
A polysilicon resistor is added between a source (ground or power) of an EMI core circuitry and a source of the EMI peripheral circuitry. In this way, the electromagnetic interference of an integrated circuit is reduced. The added polysilicon resistor reduces the di/dt of the current passing between the power and the ground of the EMI core circuitry so that the EMI is reduced.
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Hardy David B.
Zilog Inc.
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