Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2007-02-13
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257SE29012
Reexamination Certificate
active
10904214
ABSTRACT:
A semiconductor device with substrate-triggered ESD protection has a guard ring, a first MOS transistor array, a second MOS transistor array, a substrate-triggered portion, and an N-well. The first MOS transistor array, the second MOS transistor array, the substrate-triggered portion, and the N-well are formed in a region surrounded by the guard ring, and the substrate-triggered portion is located between the first MOS transistor array and the second MOS transistor array. When the ESD event occurs, the N-well is biased for directing a trigger current.
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Fourson George
Parker John M.
United Microelectronics Corp.
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