Layout method for miniaturized memory array area

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Reexamination Certificate

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07418685

ABSTRACT:
Bit lines and a pair of two tungsten wires having the same widths are formed at a portion where a through-hole is to be formed such that the bit lines and the tungsten wires are arranged at regular intervals. A through-hole for connection to another wiring layer is formed between the tungsten wires. A connection wiring made of tungsten is formed over the through-hole so as to have a predetermined margin around the through-hole. In a photolithography process, a slit having a small width enough to be insensitive to a photo-resist is formed so as to span the through-hole.

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