Layout for a high voltage darlington pair

Details Layout for a high voltage darlington pair Layout for a high voltage darlington pair

1994-11-17

1996-07-30

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257489, 257491, 257567, H01L 2358, H01L 27082

Patent

active

055414397

ABSTRACT:
There is disclosed a layout of a high voltage Darlington pair in which a circular field plate is utilized for both high voltage transistors in order to reduce the layout area. In this layout, both transistors of a Darlington pair are circular transistors and they both have a common center. This enables both high voltage transistors to share one field plate ring and one collector ring.

REFERENCES:
patent: 3221215 (1965-11-01), Osafune et al.
patent: 3751726 (1973-08-01), Einthoven et al.
patent: 3836996 (1974-09-01), Schilp et al.
patent: 4924286 (1990-05-01), Ishibashi

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