Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-04
2000-05-16
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257529, H01L 2362, H01L 2976, H01L 2900
Patent
active
060640952
ABSTRACT:
A layout design for an electrostatic discharge protection device formed above a first type of semiconductor substrate. This electrostatic discharge protection device comprises a gate region having a tortuous but continuous structure located above the first type semiconductor substrate, a common source region in the first type semiconductor substrate located on one side of the gate region, a multiple of separate drain regions in the first type semiconductor substrate located on the other side of the gate region, a multiple of contact openings distributed over the common source region and the drain regions, and, a conductive runner having a width narrower than the drain region electrically connected to each drain region.
REFERENCES:
patent: 4517583 (1985-05-01), Uchida
patent: 4987325 (1991-01-01), Seo
patent: 5282165 (1994-01-01), Miyake et al.
patent: 5442587 (1995-08-01), Kuwagata et al.
patent: 5629898 (1997-05-01), Idei et al.
patent: 5661323 (1997-08-01), Choi et al.
patent: 5663589 (1997-09-01), Saitoh et al.
patent: 5721439 (1998-02-01), Lin
patent: 5742083 (1998-04-01), Lin
patent: 5763919 (1998-06-01), Lin
Nadav Ori
Thomas Tom
United Microelectronics Corp.
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