Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means
Reexamination Certificate
2008-08-18
2010-10-26
Luu, Chuong Anh (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular power supply distribution means
C257S369000, C257S532000, C257S355000
Reexamination Certificate
active
07821039
ABSTRACT:
An integrated circuit structure includes an integrated circuit structure including a PMOS transistor including a first gate electrode; a first source region; and a first drain region; an NMOS transistor including a second gate electrode, wherein the first gate electrode and the second gate electrode are portions of a gate electrode strip; a second source region; and a second drain region. No additional transistors are formed between the PMOS transistor and the NMOS transistor. The integrated circuit further includes a VDD power rail connected to the first source region; a VSS power rail connected to the second source region; and an interconnection port electrically connected to the gate electrode strip. The interconnection port is on an outer side of a MOS pair region including the PMOS transistor, the NMOS transistor, and the region between the PMOS transistor and the NMOS transistor. The portion of the gate electrode strip in the MOS pair region is substantially straight.
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patent: 7219324 (2007-05-01), Sherlekar et al.
patent: 7603634 (2009-10-01), Sluss et al.
Chen Sheng-Hsin
Guo Ta-Pen
Hou Yung-Chin
Li Ping Chung
Lu Lee-Chung
Luu Chuong Anh
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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