Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1995-01-30
1996-10-08
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257 70, 257 78, 257103, 257201, H01L 310312, H01L 27108, H01L 3300, H01L 310328
Patent
active
055634281
ABSTRACT:
A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms.
According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.
REFERENCES:
patent: 4816421 (1989-03-01), Dynes et al.
patent: 4855254 (1989-08-01), Eshita et al.
patent: 4983538 (1991-01-01), Gotou
patent: 4997787 (1991-03-01), Eshita
patent: 5194395 (1993-03-01), Wada
patent: 5225032 (1993-07-01), Golecki
patent: 5229333 (1993-07-01), Cho et al.
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5250147 (1993-10-01), Mantl et al.
patent: 5272104 (1993-12-01), Schrantz et al.
patent: 5389799 (1995-02-01), Uemoto
patent: 5432808 (1995-07-01), Hatano et al.
Steckl et al., SiC Silcon-on-Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclobutane, J. Electrochem. Soc., vol. 141, No. 6 (1994), pp. L66-L68.
Abstract RD-173053, 1994.
Ek Bruce A.
Gates Stephen M.
Guarin Fernando J.
Iyer Subramanian S.
Powell Adrian R.
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