Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-07-10
2007-07-10
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S790000, C438S014000, C438S752000, C438S753000, C430S311000, C430S270210, C257S021000
Reexamination Certificate
active
11060843
ABSTRACT:
Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.
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Clark Shan C.
Goodner Michael D.
Leeson Michael J.
Leet Bob E.
McSwiney Michael L.
Blakely , Sokoloff, Taylor & Zafman LLP
Estrada Michelle
Tobergte Nicholas J.
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