Layer transfer of low defect SiGe using an etch-back process

Details Layer transfer of low defect SiGe using an etch-back process Layer transfer of low defect SiGe using an etch-back process

2005-05-10

2005-05-10

Kielin, Erik (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C117S097000, C117S939000

Reexamination Certificate

active

06890835

ABSTRACT:
A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGeylayers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly seletive etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGeydepending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts of the SiGe/Si heterojunction diodes.

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