Layer of crystalline silicon having (111) orientation on (111) s

Details Layer of crystalline silicon having (111) orientation on (111) s Layer of crystalline silicon having (111) orientation on (111) s

1978-06-28

1980-11-25

Garris, Bradley R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156614, 156DIG64, C30B 2306, C30B 2510, C30B 2518

Patent

active

042356628

ABSTRACT:
Low strain heteroepitaxy of (111) silicon on (111) lithium aluminum between the reconstructed 7.times.7 surface of (111) silicon and a 6.times.6 array of aluminum atoms on the surface of the (111) lithium aluminum. The 7.times.7 reconstructed (111) silicon surface contains 36 silicon atoms and 13 vacancies for every 49 surface sites. The 36 silicon atoms on an area averaged basis match the 36 aluminum atoms in the 6.times.6 aluminum diamond structure (zero vacancies) present at the (111) surface of lithium aluminum to within about 1%.

REFERENCES:
patent: 3325392 (1967-06-01), Rummel
patent: 3563730 (1971-02-01), Bach et al.
patent: 3957532 (1976-05-01), Settle et al.
patent: 3990914 (1976-11-01), Weinstein et al.
patent: 4011372 (1977-03-01), Tomezuk et al.
patent: 4042447 (1977-08-01), Reitz
patent: 4115625 (1978-09-01), Reitz
Erhrath; "Growth . . . Aluminum Layers"; J. of Elec. Matl.; vol. 4; pp. 1207-1227; (1975).

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