Layer growth using metal film and/or islands

Details Layer growth using metal film and/or islands Layer growth using metal film and/or islands

2006-06-19

2009-02-17

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S478000

Reexamination Certificate

active

07491626

ABSTRACT:
A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-III metal film on the surface in a substantially nitrogen-free atmosphere. The group-III metal film is grown such that it covers substantially an entire area of the surface. Next, the group-III metal film is nitridated to form a group-III nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-III nitride film. The islands can be used to subsequent group-III nitride growth to form the group-III nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.

REFERENCES:
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 6673701 (2004-01-01), Marsh et al.
patent: 6852161 (2005-02-01), Urashima et al.
patent: 7118929 (2006-10-01), Frayssinet et al.
patent: 2004/0224484 (2004-11-01), Fareed et al.

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