Lattice-mismatched crystal structures and semiconductor device u

Details Lattice-mismatched crystal structures and semiconductor device u Lattice-mismatched crystal structures and semiconductor device u

1995-07-24

1997-05-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257194, 257192, 257200, 257201, H01L 310328

Patent

active

056335164

ABSTRACT:
A semiconductor device has a lattice-mismatched crystal structure including a semiconductor film formed on a substrate with an intervening buffer layer. The buffer layer has a plurality of layers, including first sublayers, or regions, in which an element that controls the lattice constant is provided in increasing mole fraction, and second sublayers, or regions, in which the lattice constant is maintained. The first sublayers and second sublayers are provided in alternating fashion. The resulting device has an increased electron mobility as compared with the prior art.

REFERENCES:
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patent: 5449928 (1995-09-01), Matsugatani et al.
patent: 5495115 (1996-02-01), Kudo et al.
Chang et al, "Lattice-Mismatched In.sub.0.53 Ga.sub.0.47 As/In.sub.0.52 Al.sub.0.48 As Modulation-Doped Field-Effect Transistors on GaAs: Molecular-Beam Epitaxial Growth and Device Performance", J. Appl. Phys., 67 (7), Apr. 1, 1990, pp. 3323-3327.
Win et al, "Metamorphic In.sub.0.3 Ga.sub.0.7 As/In.sub.0.29 Al.sub.0.74 As Layer on GaAs: A New Structure for High Performance High Electron Mobility Transistor Realization", Appl. Phys. Lett., 61 (8), Aug. 24, 1992, pp. 922-924.

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