Laternal power mosfet having metal strap layer to reduce distrib

Details Laternal power mosfet having metal strap layer to reduce distrib Laternal power mosfet having metal strap layer to reduce distrib

1994-12-30

1998-06-16

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257758, 257766, 257776, 257774, H01L 2976, H01L 2348

Patent

active

057675465

ABSTRACT:
To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.

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