Laterally diffused MOSFET

Details Laterally diffused MOSFET Laterally diffused MOSFET

2008-05-13

2010-06-08

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29256

Reexamination Certificate

active

07732863

ABSTRACT:
A LDMOS transistor having a channel region located between an outer boundary of an n-type region and an inner boundary of a p-body region. A width of the LDMOS channel region is less than 80% of a distance between an outer boundary of an n+-type region and the inner boundary of a p-body region. Also, a method for making a LDMOS transistor where the n-type dopants are implanted at an angle that is greater than an angle used to implant the p-type dopants. Furthermore, a VDMOS having first and second channel regions located between an inner boundary of a first and second p-body region and an outer boundary of an n-type region of the first and second p-body regions. The width of the first and second channel regions of the VDMOS is less than 80% of a distance between the inner boundary of the first and second p-body regions and an outer boundary of an n+-type region of the first and second p-body regions. Moreover, a method for making a VDMOS transistor where the n-type dopants are implanted at an angle that is greater than an angle used to implant the p-type dopants.

REFERENCES:
patent: 2004/0046191 (2004-03-01), Mori
U.S. Appl. No. 11/753,789, Binghua Hu et al., filed May 25, 2007.

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