Laterally diffused MOS transistor having N+ source contact...

Details Laterally diffused MOS transistor having N+ source contact... Laterally diffused MOS transistor having N+ source contact...

2006-06-13

2006-06-13

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S328000, C257S329000, C257S344000, C257S408000, C257S330000

Reexamination Certificate

active

07061057

ABSTRACT:
Reduced source resistance is realized in a laterally diffused MOS transistor by fabricating the transistor in a P-doped epitaxial layer on an N-doped semiconductor substrate and using a trench contact for ohmically connecting the N-doped source region to the N-doped substrate.

REFERENCES:
patent: 5869875 (1999-02-01), Hebert
patent: 6864533 (2005-03-01), Yasuhara et al.

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