Lateral undercut of metal gate in SOI device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S182000, C438S691000, C438S701000, C438S713000, C438S754000

Reexamination Certificate

active

07736956

ABSTRACT:
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer, source/drain extensions a distance beneath the metal gate, and lateral undercuts in the sides of the metal gate.

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