Lateral type semiconductor device

Details Lateral type semiconductor device Lateral type semiconductor device

2007-05-15

2007-05-15

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S556000, C257S565000, C257S423000, C257S557000, C257S611000, C257S575000, C257S566000

Reexamination Certificate

active

10937777

ABSTRACT:
A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and collector regions surrounding the emitter regions, respectively, apart from the emitter regions with a predetermined space through the base layer; the base layer formed in a concentric circular pattern on the upper part; the emitter regions and collector regions provided with contacts respectively; and emitter and collector wiring layers connected to the contacts.

REFERENCES:
patent: 3878550 (1975-04-01), Benjamin
patent: 5460985 (1995-10-01), Tokura et al.
patent: 5789770 (1998-08-01), Rostoker et al.
patent: 6107661 (2000-08-01), Okabe et al.
patent: 6541827 (2003-04-01), Takaishi
patent: 57-100762 (1982-06-01), None
patent: 63-12859 (1988-01-01), None
patent: 63-147842 (1988-09-01), None
patent: 1-95766 (1989-06-01), None
patent: 1-214165 (1989-08-01), None
patent: 2001-44214 (2001-02-01), None
patent: 2001-267327 (2001-09-01), None
patent: 2002-299466 (2002-10-01), None

Affiliated with

Also associated with

Rating

Lateral type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3769027