Lateral trench MOSFET having a field plate

Details Lateral trench MOSFET having a field plate Lateral trench MOSFET having a field plate

2011-08-23

2011-08-23

Landau, Matthew (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257SE27091, C257SE29258, C257SE29260

Reexamination Certificate

active

08004051

ABSTRACT:
One embodiment relates to an integrated circuit that includes a lateral trench MOSFET disposed in a semiconductor body. The lateral trench MOSFET includes source and drain regions having a body region therebetween. A gate electrode region is disposed in a trench that extends beneath the surface of the semiconductor body at least partially between the source and drain. A gate dielectric separates the gate electrode region from the semiconductor body. In addition, a field plate region in the trench is coupled to the gate electrode region, and a field plate dielectric separates the field plate region from the semiconductor body. Other integrated circuits and methods are also disclosed.

REFERENCES:
patent: 5701026 (1997-12-01), Fujishima et al.
patent: 6096608 (2000-08-01), Williams
patent: 6525375 (2003-02-01), Yamaguchi et al.
patent: 6806533 (2004-10-01), Henninger et al.
patent: 6867456 (2005-03-01), Sakakibara
patent: 7804150 (2010-09-01), Jeon et al.
patent: 2008/0023787 (2008-01-01), Shimada et al.
“Folded Gate LDMOS with Low On-Resistance and High Transconductance”, Shuming Xu, Yuanzheng Zhu, Pang-Dow Foo, Yung C. Liang and Johnny K.O. Sin, IEEE, 2000, pp. 55-58.

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