Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-08-07
1993-07-13
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257328, 257265, 257287, H01L 2900, H01L 2910, H01L 2974
Patent
active
052276538
ABSTRACT:
A lateral trench-gate bipolar transistor device includes spaced-apart, surface-adjoining, laterally-oriented anode and cathode regions. A channel region at least partially surrounds the cathode region, and a gate region is provided adjacent to, but insulated from, the cathode region and the channel region. The gate region extends in a substantially vertical direction adjacent the cathode region and the channel region in order to induce a substantially vertical conduction channel in the channel region of the lateral device during operation. The gate region can advantageously be provided in a trench surrounding the transistor device, with a trench-shaped gate dielectric layer being provided on the trench sidewalls and floor to insulate the gate from the remainder of the device. Devices may be fabricated in an epitaxial surface layer, which may be provided either directly on a semiconductor substrate, or else on an intervening insulating layer. These devices provide the advantages of low on-resistance, fast switching speed, high breakdown voltage and high latch up current density.
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Biren Steven R.
Hille Rolf
North American Philips Corp.
Saadat Mahshid
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