Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Reexamination Certificate
2004-09-27
2010-06-15
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
C257S339000, C257S347000, C257S409000, C257SE29009
Reexamination Certificate
active
07737524
ABSTRACT:
In a lateral thin-film Silicon-On-Insulator (SOI) device, a field plate is provided to extend substantially over a lateral drift region to protect the device from package and surface charge effects. In particular, the field plate comprises a layer of plural metallic regions which are isolated laterally from one another by spacing so as to assume a lateral electric field profile which is established by a volume doping gradient in the silicon drift region.
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“Over 1000V n-ch LDMOSFET and p-ch LIGBT with JI RESURF Strucuture and Multiple Floating Field Plate” by T. Terashima, Symposium on Power Semiconductor Devices & ICs.
Hu Shouxiang
NXP B.V.
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